Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells
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و چاه کوانتومی چندتائی InxGa1-xN بررسی مدهای اپتیکی آلیاژ در ناحیه فروسرخ دور In0.5Ga0.5N/GaN
Optical properties of InxGa1-xN alloy and In0.5Ga0.5N/GaN multi quantum wells have been investigated in the region of far infrared. Far-IR reflectivity spectra of In0.5Ga0.5N/GaN multi quantum wells on GaAs substrate have been obtained by oblique incidence p- and s-polarization light using effective medium approximation. The spectra and the dielectric functions response give a good informa...
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